August 6-8
Santa Clara Convention Center
Booth 607, Santa Clara, CA
FMS: the Future of Memory and Storage has expanded the scope of Flash Memory Summit to encompass all tiers of Memory and Storage. As a leading global independent conference and exhibition, FMS is now in its 18th year, offering enhanced support to the industry. Serving as a centralized hub for professional growth, industry connections, and customer engagement, FMS provides a comprehensive platform for all stakeholders in the field.
Robert Soderbery
Executive Vice President and General Manager, Flash Business, Western Digital
August 6, 2024 | 3:00 pm - 3:30 pm | Mission City Ballroom
With the new era of NAND being driven by new industry dynamics, Western Digital Executive Vice President & General Manager, Flash Business, Robert Soderbery, discusses how the focus has shifted towards optimizing supply and demand, ensuring products meet customer needs, and navigating a market that is increasingly complex and segmented. He shares important insights on the critical role of storage in the AI data center all the way to the edge. Finally, Robert reveals next-generation products and technologies that are fueling growth across the entire data cycle.
CO-Presenters
Mark Miquelon
PLATFORMS PRODUCT MANAGER, WESTERN DIGITAL
August 7, 2024 | 1:50 pm - 2:20 pm | Mission City Ballroom
Learn how advancements in AI and the demand for adding GPUs to servers are driving changes such as larger physical size and power supply capacity in AI-focused server architectures. One way to resolve these competing requirements is to disaggregate the storage into its own chassis. Mark Miquelon, Platforms Product Manager at Western Digital and Rob Davis, VP of Storage Technology at NVIDIA demonstrate how this can be done without sacrificing any performance to the GPU infrastructure utilizing NVMe-oF technology.
CO-Presenters
Building on generations to date, our latest 218-Layer BiCS Flash Gen 8 (BiCS8) was recognized for the “Most Innovative Technology” award.
BiCS8 technology leverages 1Tb triple-level-cell (TLC) and quad-level-cell (QLC) with four planes and features innovative lateral shrink technology to increase bit density by over 50%. Its high-speed NAND I/O at over 3.2Gb/s, a 60% improvement over the previous generation, combined with a 20% write performance and read latency improvement, will accelerate overall performance and usability for users.